Silicon tetrachloride (SiCl4\text{SiCl}_4SiCl4) is a key volatile precursor used in the chemical vapor deposition (CVD) of high-purity silicon for semiconductor fabrication. Silicon tetrachloride is a simple molecular covalent substance.
Which row in the table below represents the most likely set of physical properties for silicon tetrachloride?
Melting point (∘C)Boiling point (∘C)Electrical conductivity in liquid stateA17132950does not conductB−6858does not conductC7141412conductsD302403conducts \begin{array}{|c|c|c|c|} \hline & \text{Melting point } (^\circ\text{C}) & \text{Boiling point } (^\circ\text{C}) & \text{Electrical conductivity in liquid state} \\ \hline \textbf{A} & 1713 & 2950 & \text{does not conduct} \\ \hline \textbf{B} & -68 & 58 & \text{does not conduct} \\ \hline \textbf{C} & 714 & 1412 & \text{conducts} \\ \hline \textbf{D} & 30 & 2403 & \text{conducts} \\ \hline \end{array} ABCDMelting point (∘C)1713−6871430Boiling point (∘C)29505814122403Electrical conductivity in liquid statedoes not conductdoes not conductconductsconductsMelting point: 1713∘C1713^\circ\text{C}1713∘C, Boiling point: 2950∘C2950^\circ\text{C}2950∘C, Electrical conductivity: does not conduct
Melting point: −68∘C-68^\circ\text{C}−68∘C, Boiling point: 58∘C58^\circ\text{C}58∘C, Electrical conductivity: does not conduct
Melting point: 714∘C714^\circ\text{C}714∘C, Boiling point: 1412∘C1412^\circ\text{C}1412∘C, Electrical conductivity: conducts
Melting point: 30∘C30^\circ\text{C}30∘C, Boiling point: 2403∘C2403^\circ\text{C}2403∘C, Electrical conductivity: conducts
