In an ion-implantation system used in semiconductor manufacturing, a beam of triply-charged aluminum ions (Al3+\text{Al}^{3+}Al3+) is accelerated through a potential difference. A detector records that 1.25 × 1011 of these ions strike a silicon wafer, transferring a total kinetic energy of 1.50 × 10-5 J to the target.
What is the potential difference through which the ions were accelerated?
4.0×10−3 V4.0 \times 10^{-3}\text{ V}4.0×10−3 V
2.5×102 V2.5 \times 10^2\text{ V}2.5×102 V
7.5×102 V7.5 \times 10^2\text{ V}7.5×102 V
1.2×10−16 V1.2 \times 10^{-16}\text{ V}1.2×10−16 V
